DatasheetsPDF.com

FRS9140D Datasheet

Part Number FRS9140D
Manufacturers Intersil
Logo Intersil
Description 11A/ -100V/ 0.315 Ohm/ Rad Hard/ P-Channel Power MOSFETs
Datasheet FRS9140D DatasheetFRS9140D Datasheet (PDF)

FRS9140D, FRS9140R, FRS9140H June 1998 11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-257AA Features • 11A, -100V, RDS(on) = 0.315Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 3.0nA Per-RAD(Si)/sec Typ.

  FRS9140D   FRS9140D






Part Number FRS9140R
Manufacturers Intersil
Logo Intersil
Description 11A/ -100V/ 0.315 Ohm/ Rad Hard/ P-Channel Power MOSFETs
Datasheet FRS9140D DatasheetFRS9140R Datasheet (PDF)

FRS9140D, FRS9140R, FRS9140H June 1998 11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-257AA Features • 11A, -100V, RDS(on) = 0.315Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 3.0nA Per-RAD(Si)/sec Typ.

  FRS9140D   FRS9140D







Part Number FRS9140H
Manufacturers Intersil
Logo Intersil
Description 11A/ -100V/ 0.315 Ohm/ Rad Hard/ P-Channel Power MOSFETs
Datasheet FRS9140D DatasheetFRS9140H Datasheet (PDF)

FRS9140D, FRS9140R, FRS9140H June 1998 11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-257AA Features • 11A, -100V, RDS(on) = 0.315Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 3.0nA Per-RAD(Si)/sec Typ.

  FRS9140D   FRS9140D







11A/ -100V/ 0.315 Ohm/ Rad Hard/ P-Channel Power MOSFETs

FRS9140D, FRS9140R, FRS9140H June 1998 11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-257AA Features • 11A, -100V, RDS(on) = 0.315Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 3.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 3E13 Neutrons/cm2 Usable to 3E14 Neutrons/cm2 • Gamma Dot • Photo Current • Neutron S G D Description Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied.


2005-04-23 : DP100S    T510    74HCT166    74HCT173    74HCT174    74HCT175    74HCT181    74HCT182    74HCT190    74HCT191   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)