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FRK460D Datasheet

Part Number FRK460D
Manufacturers Intersil
Logo Intersil
Description 17A/ 500V/ 0.400 Ohm/ Rad Hard/ N-Channel Power MOSFETs
Datasheet FRK460D DatasheetFRK460D Datasheet (PDF)

FRK460D, FRK460R, FRK460H June 1998 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-204AE Features • 17A, 500V, RDS(on) = 0.400Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 45.0nA Per-RAD(Si)/sec Typical.

  FRK460D   FRK460D






Part Number FRK460R
Manufacturers Intersil
Logo Intersil
Description 17A/ 500V/ 0.400 Ohm/ Rad Hard/ N-Channel Power MOSFETs
Datasheet FRK460D DatasheetFRK460R Datasheet (PDF)

FRK460D, FRK460R, FRK460H June 1998 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-204AE Features • 17A, 500V, RDS(on) = 0.400Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 45.0nA Per-RAD(Si)/sec Typical.

  FRK460D   FRK460D







Part Number FRK460H
Manufacturers Intersil
Logo Intersil
Description 17A/ 500V/ 0.400 Ohm/ Rad Hard/ N-Channel Power MOSFETs
Datasheet FRK460D DatasheetFRK460H Datasheet (PDF)

FRK460D, FRK460R, FRK460H June 1998 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-204AE Features • 17A, 500V, RDS(on) = 0.400Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 45.0nA Per-RAD(Si)/sec Typical.

  FRK460D   FRK460D







Part Number FRK460
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet FRK460D DatasheetFRK460 Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification FRK460 DESCRIPTION ·17A, 500V, RDS(on) = 0.4Ω ·Second Generation Rad Hard MOSFET Results From New Design Concepts APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAM.

  FRK460D   FRK460D







17A/ 500V/ 0.400 Ohm/ Rad Hard/ N-Channel Power MOSFETs

FRK460D, FRK460R, FRK460H June 1998 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-204AE Features • 17A, 500V, RDS(on) = 0.400Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 45.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 3E12 Neutrons/cm2 Usable to 3E13 Neutrons/cm2 • Gamma Dot • Photo Current • Neutron Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a d.


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