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FRK260R Datasheet

Part Number FRK260R
Manufacturers Intersil
Logo Intersil
Description 46A/ 200V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFETs
Datasheet FRK260R DatasheetFRK260R Datasheet (PDF)

FRK260D, FRK260R, FRK260H June 1998 46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-204AE Features • 46A, 200V, RDS(on) = 0.070Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 18.0nA Per-RAD(Si)/sec Typical.

  FRK260R   FRK260R






Part Number FRK260H
Manufacturers Intersil
Logo Intersil
Description 46A/ 200V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFETs
Datasheet FRK260R DatasheetFRK260H Datasheet (PDF)

FRK260D, FRK260R, FRK260H June 1998 46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-204AE Features • 46A, 200V, RDS(on) = 0.070Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 18.0nA Per-RAD(Si)/sec Typical.

  FRK260R   FRK260R







Part Number FRK260D
Manufacturers Intersil
Logo Intersil
Description 46A/ 200V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFETs
Datasheet FRK260R DatasheetFRK260D Datasheet (PDF)

FRK260D, FRK260R, FRK260H June 1998 46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-204AE Features • 46A, 200V, RDS(on) = 0.070Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 18.0nA Per-RAD(Si)/sec Typical.

  FRK260R   FRK260R







Part Number FRK260
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet FRK260R DatasheetFRK260 Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification FRK260 DESCRIPTION ·46A, 200V, RDS(on) = 0.07Ω ·Second Generation Rad Hard MOSFET Results From New Design Concepts APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARA.

  FRK260R   FRK260R







46A/ 200V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFETs

FRK260D, FRK260R, FRK260H June 1998 46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-204AE Features • 46A, 200V, RDS(on) = 0.070Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 18.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2 • Gamma Dot • Photo Current • Neutron Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a d.


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