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FRE264H Datasheet

Part Number FRE264H
Manufacturers Intersil
Logo Intersil
Description 23A/ 250V/ 0.130 Ohm/ Rad Hard/ N-Channel Power MOSFETs
Datasheet FRE264H DatasheetFRE264H Datasheet (PDF)

FRE264D, FRE264R, FRE264H June 1998 23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-258AA Features • 23A, 250V, RDS(on) = 0.130Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 22.0nA Per-RAD(Si)/sec Typical.

  FRE264H   FRE264H






Part Number FRE264R
Manufacturers Intersil
Logo Intersil
Description 23A/ 250V/ 0.130 Ohm/ Rad Hard/ N-Channel Power MOSFETs
Datasheet FRE264H DatasheetFRE264R Datasheet (PDF)

FRE264D, FRE264R, FRE264H June 1998 23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-258AA Features • 23A, 250V, RDS(on) = 0.130Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 22.0nA Per-RAD(Si)/sec Typical.

  FRE264H   FRE264H







Part Number FRE264D
Manufacturers Intersil
Logo Intersil
Description 23A/ 250V/ 0.130 Ohm/ Rad Hard/ N-Channel Power MOSFETs
Datasheet FRE264H DatasheetFRE264D Datasheet (PDF)

FRE264D, FRE264R, FRE264H June 1998 23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-258AA Features • 23A, 250V, RDS(on) = 0.130Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 22.0nA Per-RAD(Si)/sec Typical.

  FRE264H   FRE264H







23A/ 250V/ 0.130 Ohm/ Rad Hard/ N-Channel Power MOSFETs

FRE264D, FRE264R, FRE264H June 1998 23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-258AA Features • 23A, 250V, RDS(on) = 0.130Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 22.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2 • Gamma Dot • Photo Current • Neutron Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ . Total dose hardness is offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a d.


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