FQD7N10L / FQU7N10L
December 2000
QFET
FQD7N10L / FQU7N10L
100V LOGIC N-Channel MOSFET
General Description
These N-Cha...
FQD7N10L / FQU7N10L
December 2000
QFET
FQD7N10L / FQU7N10L
100V LOGIC N-Channel
MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low
voltage applications such as high efficiency switching DC/DC converters, and DC motor control.
TM
Features
5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 4.6 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirments allowing direct operation from logic drives
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D-PAK
FQD Series
I-PAK
G D S
FQU Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source
Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQD7N10L / FQU7N10L 100 5.8 3.67 23.2 ± 20
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
50 5.8 2.5 6.0 2.5 25 0.2 -55 to +150...