FQD2N100 / FQU2N100 — N-Channel QFET® MOSFET
FQD2N100 / FQU2N100
N-Channel QFET® MOSFET
1000 V, 1.6 A, 9 Ω
October 201...
FQD2N100 / FQU2N100 — N-Channel QFET®
MOSFET
FQD2N100 / FQU2N100
N-Channel QFET®
MOSFET
1000 V, 1.6 A, 9 Ω
October 2013
Description
This N-Channel enhancement mode power
MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
1.6 A, 1000 V, RDS(on) = 9 Ω (Max.)@ VGS = 10 V, ID = 0.8 A
Low Gate Charge ( Typ. 12 nC) Low Crss ( Typ. 5 pF) 100% Avalanche Tested RoHS Compliant
D D
G S
D-PAK
GDS
I-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source
Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source
Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
FQD2N100TM / FQU2N100TU 1000 1.6 1.0 6.4 ± 30 160 1.6 5.0 5.5 2.5 50 0.4
-55 to +150
300
Thermal C...