FQD20N06 / FQU20N06
May 2001
QFET
FQD20N06 / FQU20N06
60V N-Channel MOSFET
General Description
These N-Channel enhance...
FQD20N06 / FQU20N06
May 2001
QFET
FQD20N06 / FQU20N06
60V N-Channel
MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low
voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
TM
Features
16.8A, 60V, RDS(on) = 0.063Ω @ VGS = 10V Low gate charge ( typical 11.5 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating
D D
!
"
G! G S
! "
" "
D-PAK
FQD Series
I-PAK
G D S
FQU Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source
Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQD20N06 / FQU20N06 60 16.8 10.6 67.2 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
155 16.8 3.8 7.0 2...