DatasheetsPDF.com

FQPF5P20 Datasheet

Part Number FQPF5P20
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 200V P-Channel MOSFET
Datasheet FQPF5P20 DatasheetFQPF5P20 Datasheet (PDF)

FQPF5P20 May 2000 QFET FQPF5P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. TM Fea.

  FQPF5P20   FQPF5P20






200V P-Channel MOSFET

FQPF5P20 May 2000 QFET FQPF5P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. TM Features • • • • • -3.4A, -200V, RDS(on) = 1.4Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested S ! ● ● G! ▶ ▲ ● GD S TO-220F FQPF Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQPF5P20 -200 -3.4 -2.15 -13.6 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 330 -3.4 3.8 -5.5 38 0.3 -55 to +150 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal.


2005-04-01 : R2KY    M28F008    M28F010    M28F512    M27C516    M27C64    M27C64A    M27C800    M27V101    M27V102   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)