FQP20N60/FQPF20N60
600V,20A N-Channel MOSFET
General Description
Product Summary
The FQP20N60 & FQPF20N60 have been f...
FQP20N60/FQPF20N60
600V,20A N-Channel
MOSFET
General Description
Product Summary
The FQP20N60 & FQPF20N60 have been fabricated using an advanced high
voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
700V@150℃ 20A < 0.37Ω
TO-220
Top View
TO-220F
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AFQOPT20N60
FQPF20N60
Drain-Source
Voltage
VDS 600
Gate-Source
Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS dv/dt
20 20* 12 12*
80 6.5 630 1260 5
TC=25°C Power Dissipation B Derate above 25oC
PD
417 3.3
50 0.4
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
-55 to 150 300
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RθJA RθCS
FQP20N60 65 0.5
FQPF20N60 65 --
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.3
2.5
Units V V
A
A mJ mJ V/ns W W/ oC °C
°C
Units °C/W °C/W °C/W
Pa...