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FQPF17N08L Datasheet

Part Number FQPF17N08L
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 80V LOGIC N-Channel MOSFET
Datasheet FQPF17N08L DatasheetFQPF17N08L Datasheet (PDF)

FQPF17N08L December 2000 QFET FQPF17N08L 80V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as au.

  FQPF17N08L   FQPF17N08L






Part Number FQPF17N08
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 80V N-Channel MOSFET
Datasheet FQPF17N08L DatasheetFQPF17N08 Datasheet (PDF)

FQPF17N08 January 2001 QFET FQPF17N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive,.

  FQPF17N08L   FQPF17N08L







80V LOGIC N-Channel MOSFET

FQPF17N08L December 2000 QFET FQPF17N08L 80V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. TM Features • • • • • • • • 11.2A, 80V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 8.8 nC) Low Crss ( typical 29 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Low level gate drive requirements allowing direct operation from logic drives D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQPF17N08L 80 11.2 7.9 44.8 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 100 11.2 3.0 6.5 30 0.2 -55 to +175 300 -.


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