FQPF16N25C — N-Channel QFET® MOSFET
FQPF16N25C
N-Channel QFET® MOSFET
250 V, 15.6 A, 270 mΩ
Features
• 15.6 A, 250 V, R...
FQPF16N25C — N-Channel QFET®
MOSFET
FQPF16N25C
N-Channel QFET®
MOSFET
250 V, 15.6 A, 270 mΩ
Features
15.6 A, 250 V, RDS(on) = 270 mΩ (Max) @ VGS = 10 V, ID = 7.8 A
Low Gate Charge (Typ. 41 nC) Low Crss (Typ. 68 pF) 100% Avalanche Tested
November 2013
Description
This N-Channel enhancement mode power
MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D
GDS
TO-220F
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source
Voltage Drain Current Drain Current
- Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed
Gate to Source
Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate Above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC RθJA
Parameter Thermal Resistance, Junction to Case, Max Thermal Resistance, Junction to Ambien...