FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
February 2007
FRFET
FQP10N60CF / FQPF10N60CF
600V N-Channel MOSFET
Feat...
FQP10N60CF / FQPF10N60CF 600V N-Channel
MOSFET
February 2007
FRFET
FQP10N60CF / FQPF10N60CF
600V N-Channel
MOSFET
Features
9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 18 pF) Fast switching 100% avalanche tested Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
D
G G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source
Voltage Drain Current - Continuous (TC = 25°C)
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Parameter
FQP10N60CF FQPF10N60CF
600 9.0 5.7
(Note 1)
Units
V A A A V mJ A mJ V/ns
9.0 * 5.7 * 36 * ± 30
- Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
(Note 2)...