FQP7N80C / FQPF7N80C — N-Channel QFET® MOSFET
FQP7N80C / FQPF7N80C
N-Channel QFET® MOSFET
800 V, 6.6 A, 1.9 Ω
December...
FQP7N80C / FQPF7N80C — N-Channel QFET®
MOSFET
FQP7N80C / FQPF7N80C
N-Channel QFET®
MOSFET
800 V, 6.6 A, 1.9 Ω
December 2013
Description
This N-Channel enhancement mode power
MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
6.6 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.3 A
Low Gate Charge (Typ. 27 nC)
Low Crss (Typ. 10 pF)
100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
Drain-Source
Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
VGSS
Gate-Source
Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
FQP7N80C FQPF7N80C 800
6.6 6.6 * 4.2 4.2 * 26.4 26.4 *
± 30 580 6.6 16.7 4.5 167 56 1.33 0....