FQP44N08
August 2000
QFET
FQP44N08
80V N-Channel MOSFET
General Description
These N-Channel enhancement mode power fie...
FQP44N08
August 2000
QFET
FQP44N08
80V N-Channel
MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low
voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
TM
Features
44A, 80V, RDS(on) = 0.034Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
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TO-220
FQP Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source
Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP44N08 80 44 31.1 176 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
450 44 12.7 6.5 127 0.85 -55 to +175 300
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purp...