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FQP3P20 Datasheet

Part Number FQP3P20
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 200V P-Channel MOSFET
Datasheet FQP3P20 DatasheetFQP3P20 Datasheet (PDF)

FQP3P20 April 2000 QFET FQP3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. TM Fea.

  FQP3P20   FQP3P20






200V P-Channel MOSFET

FQP3P20 April 2000 QFET FQP3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. TM Features • • • • • • -2.8A, -200V, RDS(on) = 2.7Ω @VGS = -10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability S !   G! G DS   TO-220 FQP Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP3P20 -200 -2.8 -1.77 -11.2 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 150 -2.8 5.2 -5.5 52 0.42 -55 to +150 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resis.


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