FQP17P06

FQP17P06 P-Channel QFET® MOSFET March 2013 FQP17P06 P-Channel QFET® MOSFET - 60 V, - 17 A, 120 m Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features - 17 A, - 60 V, RDS(on) = 120 m (Max.) @ VGS = - 10 V, ID = - 8.5 A Low Gate Charge (Typ.21 nC) Low Crss (Typ. 80 pF) 100% Avalanche Tested 175C Maximum Junction Temperature Rating S  G D S TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds G ● ● ▶▲ ●  D FQP17P06 -60 -17 -12 -68  25 300 -17 7.9 -7.0 79 0.53 -55 to +175 300 Unit V A A A V mJ A mJ V/ns W W/°...