FQP17P06 P-Channel QFET® MOSFET
March 2013
FQP17P06
P-Channel QFET® MOSFET
- 60 V, - 17 A, 120 m
Description
This P-...
FQP17P06 P-Channel QFET®
MOSFET
March 2013
FQP17P06
P-Channel QFET®
MOSFET
- 60 V, - 17 A, 120 m
Description
This P-Channel enhancement mode power
MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
- 17 A, - 60 V, RDS(on) = 120 m (Max.) @ VGS = - 10 V, ID = - 8.5 A
Low Gate Charge (Typ.21 nC) Low Crss (Typ. 80 pF) 100% Avalanche Tested 175C Maximum Junction Temperature Rating
S
G D S
TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source
Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source
Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
G
● ●
▶▲
●
D
FQP17P06 -60 -17 -12 -68 25 300 -17 7.9 -7.0 79 0.53
-55 to +175
300
Unit V A A A V mJ A mJ
V/ns W
W/°...