FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET
FQP10N20C / FQPF10N20C
N-Channel QFET® MOSFET
200 V, 9.5 A, 360 mΩ
Nov...
FQP10N20C / FQPF10N20C — N-Channel QFET®
MOSFET
FQP10N20C / FQPF10N20C
N-Channel QFET®
MOSFET
200 V, 9.5 A, 360 mΩ
November 2013
Features
9.5 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A
Low Gate Charge (Typ. 20 nC) Low Crss (Typ. 40.5 pF) 100% Avalanche Tested
Description
This N-Channel enhancement mode power
MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D
GDS
TO-220
GDS
TO-220F
G S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
Parameter
Drain to Source
Voltage Drain Current Drain Current
-Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed
Gate to Source
Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate above 25oC
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC RθJA
Parameter Thermal Resistance, Junctio...