FQI5N60C — N-Channel QFET® MOSFET
FQI5N60C
N-Channel QFET® MOSFET
600 V, 4.5 A, 2.5 Ω
November 2013
Features
• 4.5 A,...
FQI5N60C — N-Channel QFET®
MOSFET
FQI5N60C
N-Channel QFET®
MOSFET
600 V, 4.5 A, 2.5 Ω
November 2013
Features
4.5 A, 600 V, RDS(on) = 2.5 Ω (Max.) @VGS = 10 V, ID = 2.1 A Low Gate Charge (Typ. 15 nC) Low Crss (Typ. 6.5 pF) 100% Avalanche Tested
Description
This N-Channel enhancement mode power
MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D
GDS
I2-PAK
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source
Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current
- Pulsed
Gate-Source
Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
PD TJ, TSTG TL
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RθJC RθJA
Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max.
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