FQB55N10 / FQI55N10
August 2000
QFET
FQB55N10 / FQI55N10
100V N-Channel MOSFET
General Description
These N-Channel enh...
FQB55N10 / FQI55N10
August 2000
QFET
FQB55N10 / FQI55N10
100V N-Channel
MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low
voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D
TM
Features
55A, 100V, RDS(on) = 0.026Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 130 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
D
!
"
G
S
G!
! "
" "
D2-PAK
FQB Series
G D S
I2-PAK
FQI Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source
Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB55N10 / FQI55N10 100 55 38.9 220 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) *
1100 55 15.5 6.0 3.75 155 1.03 -55 to +175 300
TJ, TSTG TL
Power Dissipation (TC = 2...