FQI4N90 — N-Channel QFET® MOSFET
FQI4N90
N-Channel QFET® MOSFET
900 V, 4.2 A, 3.3 Ω
November 2013
Description
This N-...
FQI4N90 — N-Channel QFET®
MOSFET
FQI4N90
N-Channel QFET®
MOSFET
900 V, 4.2 A, 3.3 Ω
November 2013
Description
This N-Channel enhancement mode power
MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
4.2 A, 900 V, RDS(on) = 3.3 Ω (Max.) @ VGS = 10 V, ID = 2.1 A
Low Gate Charge (Typ. 24 nC)
Low Crss (Typ. 9.5 pF)
100% Avalanche Tested
D
GDS
I2-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, Tstg TL
Parameter
Drain-Source
Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source
Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering, 1/8” from case for 5 seconds.
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
FQI4N90TU 900 4.2 2.65 16.8 ± 30 570 4.2 14 4.0 3.13 140 1.12
-55 to +150
300
Unit V A A A V mJ A mJ V W W
W/°C °C
°C
Thermal Characteristics
Symbol
Parameter...