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FQI10N20L Datasheet

Part Number FQI10N20L
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 200V LOGIC N-Channel MOSFET
Datasheet FQI10N20L DatasheetFQI10N20L Datasheet (PDF)

FQB10N20L / FQI10N20L December 2000 QFET FQB10N20L / FQI10N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency swit.

  FQI10N20L   FQI10N20L






Part Number FQI10N20C
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 200V N-Channel MOSFET
Datasheet FQI10N20L DatasheetFQI10N20C Datasheet (PDF)

FQB10N20C/FQI10N20C QFET FQB10N20C/FQI10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converte.

  FQI10N20L   FQI10N20L







Part Number FQI10N20
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 200V N-Channel MOSFET
Datasheet FQI10N20L DatasheetFQI10N20 Datasheet (PDF)

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  FQI10N20L   FQI10N20L







200V LOGIC N-Channel MOSFET

FQB10N20L / FQI10N20L December 2000 QFET FQB10N20L / FQI10N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control. TM Features • • • • • • • 10A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 13 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from logic drivers D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB10N20L / FQI10N20L 200 10 6.3 40 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 180 10 8.7 5.5 3.13 87 0.7 -55 to +150 .


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