FQD60N03L

FQD60N03L April 2004 FQD60N03L N-Channel Logic Level MOSFETs 30V, 30A, 0.023 Ω General Description This device employs advanced MOSFET technology and features low gate charge while maintaining low onresistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features Fast switching r DS(ON) = 0.014 Ω (Typ), V GS = 10V r DS(ON) = 0.024 Ω (Typ), V GS = 4.5V Qg (Typ) = 9.6nC, V GS = 5V Qgd (Typ) = 3.4nC C ISS (Typ) = 900pF Applications DC/DC converters DRAIN (FLANGE) GATE G SOURCE D TO-252AA FDD SERIES S MOSFET Maximum Ratings T C=25°C unless otherwise noted Symbol V DSS V GS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (T C = 25 o C, V GS = 10V) ID Continuous (T C = 100 o C, V GS = 4.5V) Continuous (T C = 25 o C, V GS = 10V, R θJA = 52 o C/W) Pulsed PD TJ, T STG Power dissipation Derate above 25 o C Operating and Storage Temperature 30 19 7.9 Figure 4 45 0.37 -55 to 150 A A A A W W/ o C oC Ratings 30 ± 20 Units V V Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in 2 copper pad area 2.73 100 52 o C/W o C/W o C/W Package Marking and Ordering Information Device Marking FQD60N03L Device FQD60N03L Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units ©2004 Fairchild ...