FQD5P10 P-Channel QFET® MOSFET
FQD5P10
P-Channel QFET® MOSFET
-100 V, -3.6 A, 1.05
April 2013
Description
This P-Cha...
FQD5P10 P-Channel QFET®
MOSFET
FQD5P10
P-Channel QFET®
MOSFET
-100 V, -3.6 A, 1.05
April 2013
Description
This P-Channel enhancement mode power
MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
D
Features
-3.6 A, -100 V, RDS(on) = 1.05 (Max.)@ VGS = -10 V, ID = 1.8 A
Low Gate Charge (Typ. 6.3 nC) Low Crss (Typ. 18 pF) 100% avalanche tested
D
G G
S
D-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source
Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source
Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJC RJA RJA
Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambien...