FQD16N25C — N-Channel QFET® MOSFET
FQD16N25C
N-Channel QFET® MOSFET
250 V, 16 A, 270 mΩ
Features
• 16 A, 250 V, RDS(on)...
FQD16N25C — N-Channel QFET®
MOSFET
FQD16N25C
N-Channel QFET®
MOSFET
250 V, 16 A, 270 mΩ
Features
16 A, 250 V, RDS(on) = 270 mΩ (Max.) @ VGS = 10 V, ID = 8 A
Low Gate Charge (Typ. 41 nC) Low Crss (Typ. 68 pF) 100% Avalanche Tested
November 2013
Description
This N-Channel enhancement mode power
MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
G S
D D-PAK
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source
Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current
- Pulsed
Gate-Source
Voltage
Single...