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FQD10N20L Datasheet

Part Number FQD10N20L
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FQD10N20L DatasheetFQD10N20L Datasheet (PDF)

FQD10N20L — N-Channel QFET® MOSFET FQD10N20L N-Channel QFET® MOSFET 200 V, 7.6 A, 360 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active powe.

  FQD10N20L   FQD10N20L






Part Number FQD10N20C
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 200V N-Channel MOSFET
Datasheet FQD10N20L DatasheetFQD10N20C Datasheet (PDF)

FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET FQD10N20C / FQU10N20C N-Channel QFET® MOSFET 200 V, 7.8 A, 360 mΩ Features • 7.8 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 40.5 pF) • 100% Avalanche Tested November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to redu.

  FQD10N20L   FQD10N20L







Part Number FQD10N20
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 200V LOGIC N-Channel MOSFET
Datasheet FQD10N20L DatasheetFQD10N20 Datasheet (PDF)

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  FQD10N20L   FQD10N20L







Part Number FQD10N20
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 200V N-Channel MOSFET
Datasheet FQD10N20L DatasheetFQD10N20 Datasheet (PDF)

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  FQD10N20L   FQD10N20L







N-Channel MOSFET

FQD10N20L — N-Channel QFET® MOSFET FQD10N20L N-Channel QFET® MOSFET 200 V, 7.6 A, 360 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 7.6 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.8 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 14 pF) • 100% Avalanche Tested • Low Level Gate Drive Requirements Allowing Direct Operation Form Logic Drivers G S D D-PAK D G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8” from case for 5 seconds (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) S FQD10N20LTM 200 7.6 4.8 30.4 ± 20 180 7.6 5.1 5.5 2.5 51 0.4 -55 to +150 300 .


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