FQB95N03L
December 2002
FQB95N03L
N-Channel Logic Level PWM Optimized Power MOSFET
General Description
This device emp...
FQB95N03L
December 2002
FQB95N03L
N-Channel Logic Level PWM Optimized Power
MOSFET
General Description
This device employs a new advanced trench
MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
Fast switching rDS(ON) = 0.0064Ω (Typ), V GS = 10V rDS(ON) = 0.010Ω (Typ), VGS = 5V Qg (Typ) = 24nC, VGS = 5V Qgd (Typ) = 8nC CISS (Typ) = 2600pF
Applications
DC/DC converters
DRAIN (FLANGE)
D
GATE SOURCE
G
TO-263AB
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source
Voltage Gate to Source
Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 10V, Rθ JA = 43oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature 75 48 15
S
Ratings 30 ±16
Units V V A A A A W W/oC
oC
Figure 4 80 0.65 -55 to 150
Thermal Characteristics
Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.5 62 43
o o
C/W C/W
oC/W
Package Marking and Ordering Information
Device Marking FQB95N03L Device FQB95N03L Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units
©2002 Fairchild Semiconductor Corporation
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