FQB70N08 / FQI70N08
August 2000
QFET
FQB70N08 / FQI70N08
80V N-Channel MOSFET
General Description
These N-Channel enha...
FQB70N08 / FQI70N08
August 2000
QFET
FQB70N08 / FQI70N08
80V N-Channel
MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low
voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D
TM
Features
70A, 80V, RDS(on) = 0.017Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 180 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
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D2-PAK
FQB Series
G D S
I2-PAK
FQI Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source
Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB70N08 / FQI70N08 80 70 49.5 280 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) *
1150 70 15.5 6.5 3.75 155 1.03 -55 to +175 300
TJ, TSTG TL
Power Dissipation (TC = 25°C)...