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FQB5N50C Datasheet

Part Number FQB5N50C
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FQB5N50C DatasheetFQB5N50C Datasheet (PDF)

FQB5N50C — N-Channel QFET® MOSFET FQB5N50C N-Channel QFET® MOSFET 500 V, 5 A, 1.4 Ω November 2013 Features • 5 A, 500 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 2.5 A • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ. 15 pF) • 100% Avalanche Tested • RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state res.

  FQB5N50C   FQB5N50C






Part Number FQB5N50CF
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FQB5N50C DatasheetFQB5N50CF Datasheet (PDF)

FQB5N50CF 500V N-Channel MOSFET May 2006 FRFET FQB5N50CF 500V N-Channel MOSFET Features • 5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V • Low gate charge ( typical 18nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resista.

  FQB5N50C   FQB5N50C







Part Number FQB5N50
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 500V N-Channel MOSFET
Datasheet FQB5N50C DatasheetFQB5N50 Datasheet (PDF)

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  FQB5N50C   FQB5N50C







N-Channel MOSFET

FQB5N50C — N-Channel QFET® MOSFET FQB5N50C N-Channel QFET® MOSFET 500 V, 5 A, 1.4 Ω November 2013 Features • 5 A, 500 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 2.5 A • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ. 15 pF) • 100% Avalanche Tested • RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D D G S D2-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max. S FQB5N50CTM 500 5 2.9 20 ± 30.


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