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FQB33N10L Datasheet

Part Number FQB33N10L
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 100V LOGIC N-Channel MOSFET
Datasheet FQB33N10L DatasheetFQB33N10L Datasheet (PDF)

FQB33N10L / FQI33N10L September 2000 QFET FQB33N10L / FQI33N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage ap.

  FQB33N10L   FQB33N10L






Part Number FQB33N10
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 100V N-Channel MOSFET
Datasheet FQB33N10L DatasheetFQB33N10 Datasheet (PDF)

FQB33N10 / FQI33N10 April 2000 QFET FQB33N10 / FQI33N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications suc.

  FQB33N10L   FQB33N10L







100V LOGIC N-Channel MOSFET

FQB33N10L / FQI33N10L September 2000 QFET FQB33N10L / FQI33N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. TM Features • • • • • • • 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 70 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB33N10L / FQI33N10L 100 33 23 132 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * 430 33 12.7 6.0 3.75 127 0.85 -55 to +175 300 TJ, TSTG TL Power Dissipation (TC = 25°C) .


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