FQB27P06 / FQI27P06
May 2001
QFET
FQB27P06 / FQI27P06
60V P-Channel MOSFET
General Description
These P-Channel enhance...
FQB27P06 / FQI27P06
May 2001
QFET
FQB27P06 / FQI27P06
60V P-Channel
MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low
voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
TM
Features
-27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V Low gate charge ( typical 33 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
D G! G
S
!
● ●
▶ ▲
●
S
D2-PAK
FQB Series
G D S
I2-PAK
FQI Series
!
D
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source
Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB27P06 / FQI27P06 -60 -27 -19.1 -108 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) *
560 -27 12 -7.0 3.75 120 0.8 -55 to +175 30...