FQB1N60

FQB1N60 / FQI1N60 April 2000 QFET FQB1N60 / FQI1N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. TM Features 1.2A, 600V, RDS(on) = 11.5Ω @VGS = 10 V Low gate charge ( typical 5.0 nC) Low Crss ( typical 3.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series G D S I2-PAK FQI Series G! ! " " " ! S Absolute Maximum Ratings

Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB1N60 / FQI1N60 600 1.2 0.76 4.8 ±
30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 50 1.2 4.0 4.5 3.13 40 0.32 -55 to +150 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8
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