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FQB19N20 Datasheet

Part Number FQB19N20
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 200V N-Channel MOSFET
Datasheet FQB19N20 DatasheetFQB19N20 Datasheet (PDF)

FQB19N20 — N-Channel QFET® MOSFET FQB19N20 N-Channel QFET® MOSFET 200 V, 19.4 A, 150 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power.

  FQB19N20   FQB19N20






Part Number FQB19N20L
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FQB19N20 DatasheetFQB19N20L Datasheet (PDF)

FQB19N20L — N-Channel QFET® MOSFET FQB19N20L N-Channel QFET® MOSFET 200 V, 21 A, 140 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power.

  FQB19N20   FQB19N20







Part Number FQB19N20C
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 200V N-Channel MOSFET
Datasheet FQB19N20 DatasheetFQB19N20C Datasheet (PDF)

FQB19N20C — N-Channel QFET® MOSFET FQB19N20C N-Channel QFET® MOSFET 200 V, 19 A, 170 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power.

  FQB19N20   FQB19N20







200V N-Channel MOSFET

FQB19N20 — N-Channel QFET® MOSFET FQB19N20 N-Channel QFET® MOSFET 200 V, 19.4 A, 150 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 19.4 A, 200 V, RDS(on) = 150 mΩ (Max.) @ VGS = 10 V, ID = 9.7 A • Low Gate Charge (Typ. 31 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested • RoHS Compliant D D G S D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.  , 6 6 , <  6 < !$ 8         ,             2.*/74   2.'+.


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