DatasheetsPDF.com

FQB13N06 Datasheet

Part Number FQB13N06
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 60V N-Channel MOSFET
Datasheet FQB13N06 DatasheetFQB13N06 Datasheet (PDF)

FQB13N06 / FQI13N06 May 2001 QFET FQB13N06 / FQI13N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such a.

  FQB13N06   FQB13N06






Part Number FQB13N06L
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 60V LOGIC N-Channel MOSFET
Datasheet FQB13N06 DatasheetFQB13N06L Datasheet (PDF)

FQB13N06L / FQI13N06L May 2001 QFET FQB13N06L / FQI13N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applicati.

  FQB13N06   FQB13N06







60V N-Channel MOSFET

FQB13N06 / FQI13N06 May 2001 QFET FQB13N06 / FQI13N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products. D TM Features • • • • • • • 13A, 60V, RDS(on) = 0.135Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 15 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB13N06 / FQI13N06 60 13 9.2 52 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * 85 13 4.5 7.0 3.75 45 0.3 -55 to +175 300 TJ, TSTG TL Power Dissipa.


2005-04-01 : R2KY    M28F008    M28F010    M28F512    M27C516    M27C64    M27C64A    M27C800    M27V101    M27V102   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)