FQB12N50 / FQI12N50
QFET
FQB12N50 / FQI12N50
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode...
FQB12N50 / FQI12N50
QFET
FQB12N50 / FQI12N50
500V N-Channel
MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction, electronic lamp ballasts based on half bridge.
TM
Features
12.1A, 500V, RDS(on) = 0.49Ω @VGS = 10 V Low gate charge ( typical 39 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
D
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◀
▲
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G! G S
D2-PAK
FQB Series
G D S
I2-PAK
FQI Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source
Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB12N50 / FQI12N50 500 12.1 7.6 48.4 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) *
878 12.1 17.9 4.5 3.13 179 1.43 -55 to +150 300
TJ, Tstg TL
Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Tempera...