FQB11P06

FQB11P06 — P-Channel QFET® MOSFET FQB11P06 P-Channel QFET® MOSFET -60 V, -11.4 A, 175 mΩ November 2013 Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features -11.4 A, -60 V, RDS(on) = 175 mΩ (Max.) @ VGS = -10 V, ID = -5.7 A Low Gate Charge (Typ. 13 nC) Low Crss (Typ. 45 pF) 100% Avalanche Tested 175°C Maximum Junction Temperature Rating S D G G S D2-PAK D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8" from case for 5 seconds (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FQB11P06TM -60 -11.4 -8.05 -45.6 ± 25 160 -11.4 5.3 -7.0 3.13 53 0.35 -55 to +175 300 Unit V A A ...