FQAF33N10L
September 2000
QFET
FQAF33N10L
100V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement ...
FQAF33N10L
September 2000
QFET
FQAF33N10L
100V LOGIC N-Channel
MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low
voltage applications such as high efficiency switching DC/DC converters, and DC motor control.
TM
Features
25.8A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 70 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
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TO-3PF
FQAF Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source
Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQAF33N10L 100 25.8 18.2 103.2 ± 20
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
430 25.8 8.3 6.0 83 0.56 -55 to +175 300
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for sol...