FQA8N80

FQA8N80 March 2001 QFET FQA8N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.. TM Features 8.4A, 800V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQA8N80 800 8.4 5.3 33.6 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 850 8.4 22 4.0 220 1.75 -55 to +150 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Jun...