FQA140N10
September 2000
QFET
FQA140N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode pow...
FQA140N10
September 2000
QFET
FQA140N10
100V N-Channel
MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low
voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
TM
Features
140A, 100V, RDS(on) = 0.01Ω @VGS = 10 V Low gate charge ( typical 220 nC) Low Crss ( typical 470 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
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FQA Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source
Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQA140N10 100 140 99 560 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
1500 140 37.5 6.5 375 2.5 -55 to +175 300
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for so...