FPN660A

FPN660/FPN660A FPN660/FPN660A PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0A continuous. Sourced from process PA. C BE TO-226 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range FPN660 60 80 5 3 -55 ~ +150 FPN660A 60 60 5 3 -55 ~ +150 Units V V V A °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltage (V) and currents (A) are negative polarity for PNP transistors Electrical Characteristics TA=25°C unless otherwise noted Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE Parameter Test Conditions IC = 10mA, IB = 0 IE = 100µA, IE = 0 IE = 100µA, IC = 0 VCB = 30V, IE = 0 VCB = 30V, IE = 0, TA = 100°C VEB = 4.0V, IC = 0 IC = 100mA, VCE = 2.0V IC = 500mA, VCE = 2.0V IC = 1.0A, VCE = 2.0V IC = 2.0A, VCE = 2.0V VCE(sat) Collector-Emitter Saturation Voltage IC = 1.0A, IB = 100mA IC = 2.0A, IB = 200mA IC = 1.0A, IB = 100mA IC = 1.0A, VCE = 2.0V VCB = 10V, IE = 0, f = 1MHz IC = 100mA, VCE = 5.0V, f = 100M...