FPM2750QFN

FPM2750QFN LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE FEATURES: Balanced low noise amplifier module Excellent Noise figure: 0.4dB at 1850MHz Low drive current: 40mA typical (3.0V) Combined IP3: 36dBm (100mA) Combined P1dB: 23dBm (100mA) Small footprint: 4mm x 4mm x 0.9mm QFN RoHS compliant: (Directive 2002/95/EC) Datasheet v2.5 PACKAGE: GENERAL DESCRIPTION: The FPM2750QFN is a packaged pair of pseudomorphic High Electron Mobility Transistors (pHEMT) specifically optimised for balanced configuration systems. The Filtronic 0.25µm process ensures class-leading noise performance. The use of a small footprint plastic package allows for a cost effective total system implementation. TYPICAL APPLICATIONS: Wireless infrastructure: Tower mounted Amplifiers and front end LNAs for EGSM/PCS/WCDMA/UMTS base stations High intercept-point LNAs ELECTRICAL SPECIFICATIONS (as measured on each device unless otherwise stated): PARAMETER Noise Figure SYMBOL NF CONDITIONS VDS = 3.0 V; IDS = 40mA VDS = 4.0 V; IDS = 100mA MIN TYP 0.4 0.6 32 MAX UNITS dB Output IP3 in balanced mode SSG in balanced mode IP3 VDS = 3.0 V; IDS = 40mA VDS = 4.0 V; IDS = 100mA 33 dBm 36 18.5 dB SSG VDS = 3.0 V; IDS = 40mA VDS = 4.0 V; IDS = 100mA 17.5 20 21 dBm P1dB in balanced mode P1dB VDS = 3.0 V; IDS = 40mA VDS = 4.0 V; IDS = 100mA 21.5 23.5 19.0 19.5 17.5 17.5 dBm dB Small Signal Gain SSG VDS = 3.0 V; IDS = 40mA VDS = 4.0 V; IDS = 100mA Power at 1dB Gain Compression ...