FPD1500DFN

FPD1500DFN LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES (1850MHZ): 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency RoHS compliant (Directive 2002/95/EC) Datasheet v2.1 PACKAGE: GENERAL DESCRIPTION: The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels. TYPICAL APPLICATIONS: Drivers or output stages in PCS/Cellular base station transmitter amplifiers High intercept-point LNAs WLL and WLAN systems, and other types of wireless infrastructure systems. ELECTRICAL SPECIFICATIONS: PARAMETER Power at 1dB Gain Compression Small-Signal Gain SYMBOL P1dB SSG CONDITIONS VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS MIN TYP 27 18 MAX UNITS dBm dB Power-Added Efficiency PAE VDS = 5 V; IDS = 50% IDSS; POUT = P1dB 45 % Noise Figure Output Third-Order Intercept Point (from 15 to 5 dB below P1dB) NF IP3 VDS = 5 V; IDS = 50% IDSS VDS = 5V; IDS = 50% IDSS Matched for optimal power Matched for best IP3 1.2 dB 40 42 375 465 750 400 1 0.7 12 12 0.9 16 16 15 1.3 550 dBm Saturated Drain-Source Current Maximum Dra...