FPD10000V

PRELIMINARY FPD10000V 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS PERFORMANCE (3.5 GHz) (802.16-2004 WiMAX Modulation) ♦ 30 dBm Output Power, < 2.5% EVM ♦ 9.5 dB Power Gain ♦ Class AB Efficiency 10% (10V / 1A IDQ) GATE DRAIN ♦ Class B Efficiency 18% (8V / 300 mA IDQ) BOND PAD BOND PAD ♦ 39 dBm CW Output Power (16X) (16X) ♦ > 48 dBm 3rd Order Intercept Point ♦ Plated Source Vias – No Source wirebonds needed ♦ 2.5 and 3.5 GHz Evaluation boards available (packaged device) DESCRIPTION AND APPLICATIONS DIE SIZE (µm): 3750 x 750 DIE THICKNESS: 50µm BONDING PADS (µm): >70 x 60 SEE BONDING DIAGRAM BELOW The FPD10000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for WiMAX (WMAN) IEEE 802.16 power amplifiers. The device can be biased from Class C (IDQ < 200 mA), to Class A (IDQ = 1.0 – 1.5 A) to deliver optimal linear power over the desired output power range. The FPD10000V is also available in packaged form. ELECTRICAL SPECIFICATIONS AT 22°C Parameter Power at 1dB Gain Compression CW Single Tone Power Gain at dB Gain Compression CW Single Tone Channel Power with 802.16-2004 2.5% max. EVM Channel Power with 802.16-2004 2.5% max. EVM Power-Added Efficiency 802.16-2004 modulation Saturated Drain-Source Current Gate-Source Leakage Current Pinch-Off Voltage Gate-Drain Breakdown Voltage Thermal Resistivity IDSS IGSO |VP| |VBDGD| ΘCC PCH PCH Eff G1dB Symbol P1dB Test Conditions VDS = 10V; IDQ = 1.0 A ΓS and ΓL tuned...