FP812

Power Transistor FP812 Absolute Maximum Ratings (Ta=25ºC) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –120 –120 –6 –8 (pulse –12) –3 35 (Tc=25ºC) 150 –55 to +150 Unit V V V A A W ºC ºC Electrical Characteristics Symbol ICBO IEBO VCEO hFE VCE (sat) Test Conditions VCB = –120V VEB = –6V IC = –50mA VCE = –4V, IC = –3A IC = –3A, IB = –0.3A Ratings 10max 10max –120min 70min –0.3max 4 (Ta=25ºC) Unit µA µA V V External Dimensions FM20 (full-mold) 10.0 4.2 2.8 3.3 C0.5 8.4 a b 16.9 VCC (V) 12 RL (Ω) 4 IC (A) 3 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –30 IB2 (mA) 30 t on (µs) 2.5 t stg (µs) 0.4 tf (µs) 0.6 2.54 2.2 1.35 1.35 0.85 2.54 3.9 Typical Switching Characteristics 0.8 2.6 (13.5) 0.45 B C E a) Type No. b) Lot No. (Unit: mm) s IC — VCE Characteristics (typ.) –8 mA 00 –3 s VCE (sat) — I B Characteristics (typ.) –100mA –75mA s IC — VBE Temperature Characteristics (typ.) –8 (VBE = –4V) –2 Ic = –3A –2 0 0m A –1 50 m A –6 –50mA –6 VCE (sat) (A) Ic = –5A IC (A) IC (A) –4 –25mA –2 –1 –4 Tc = –40ºC 25ºC 75ºC 125ºC 0 –0.5 –1.0 –1.5 IB = –10mA Ic = –1A –2 0 0 –1 –2 –3 –4 0 –5 –10 –50 –100 –500 –1000 –2000 0 VCE (V) IB (mA) VBE (V) s hFE — IC Characteristics (typ.) 500 (VCE = –4V) s hFE — IC Temperature Characteristics (typ.) 500 Tc = 125ºC (VCE = –4V) s j-a — t Characteristics ) ºC 25 50 10 5 (ºC/W) Typ hFE hFE 75ºC 25ºC 100 –55ºC 50 NO 1 0.5 Fin = (Ta Tc = 25ºC j-a 100 50 30 –0.01 –0.05 –0.1 –0.5 –1 –5 –8 Sin...