DatasheetsPDF.com

FP75R12KT3 Datasheet

Part Number FP75R12KT3
Manufacturers Infineon
Logo Infineon
Description IGBT
Datasheet FP75R12KT3 DatasheetFP75R12KT3 Datasheet (PDF)

TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP75R12KT3 EconoPIM™3ModulmitschnellemTrench/FeldstopIGBT3undHighEfficiencyDiode EconoPIM™3modulewithfasttrench/fieldstopIGBT3andEmitterControlledHighEfficiencydiode IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 1.

  FP75R12KT3   FP75R12KT3






Part Number FP75R12KT3
Manufacturers eupec GmbH
Logo eupec GmbH
Description IGBT-inverter
Datasheet FP75R12KT3 DatasheetFP75R12KT3 Datasheet (PDF)

Technische Information / technical information www.DataSheet4U.com IGBT-Module IGBT-modules FP75R12KT3 Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values ! ! 1+ 6 ! ; ; $ # , < "# # ! $ $ $ ! # "# # 1 $ $ $ # %&' ( )*+ %- ( *+ %- ( )*+ 7 ( 0 # 8 %- ( %- ( )*+ *+ ,-./ 2- 345 22-9: 6=4= ,?./ # ,-. DE= ,?.=G I? ?K3= , , +KOD +ROD 2-./ 2?./ Y 43 8 H 8 F 8 8 ) 8S 8) 8 8 F H8)) F8S H8 8 )8 08 08F )8 8 0 )8 8 )8 S J J J J J J J J #[ #[ .

  FP75R12KT3   FP75R12KT3







IGBT

TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP75R12KT3 EconoPIM™3ModulmitschnellemTrench/FeldstopIGBT3undHighEfficiencyDiode EconoPIM™3modulewithfasttrench/fieldstopIGBT3andEmitterControlledHighEfficiencydiode IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 150 Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage  VCES  IC nom IC  ICRM  Ptot  VGES  1200 75 105 150 355 +/-20 V  A A A W V CharakteristischeWerte/CharacteristicValues Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 75 A, VGE = 15 V IC = 75 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 3,00 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tv.


2020-06-12 : FP50R12KT4P    FP75R17N3E4    FZ1600R17HP4    FZ1800R17HP4_B9    FZ1800R17HP4_B29    FF600R12IP4V    FF1800R17IP5P    FF1500R12IE5    FF1500R12IE5P    FF600R12IP4   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)