RFG50N06LE, RFP50N06LE, RF1S50N06LESM
Data Sheet October 1999 File Number 4072.3
50A, 60V, 0.022 Ohm, Logic Level N-Cha...
RFG50N06LE, RFP50N06LE, RF1S50N06LESM
Data Sheet October 1999 File Number 4072.3
50A, 60V, 0.022 Ohm, Logic Level N-Channel Power
MOSFETs
These N-Channel enhancement mode power
MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49164.
Features
50A, 60V rDS(ON) = 0.022Ω Temperature Compensating PSPICE® Model Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER RFG50N06LE RFP50N06LE RF1S50N06LESM PACKAGE TO-247 TO-220AB TO-263AB BRAND FG50N06L FP50N06L F50N06LE
Symbol
D
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. RF1S50N06LESM9A.
S
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE DRAIN GATE
JEDEC TO-263AB
DRAIN (FLANGE) GATE SOURCE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark o...