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FP410L Datasheet

Part Number FP410L
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Double Differential Magneto Resistor
Datasheet FP410L DatasheetFP410L Datasheet (PDF)

Double Differential Magneto Resistor FP 410 L (4 x 80) FM Dimensions in mm Features • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage • Compact construction • Available in strip form for automatic assembly Type FP 410 L (4×80) FM FP 410 L (4×80) FM Semiconductor Group 1 Typical applications • • • • Incremental angular encoders Detection of sense of rotation Detection of speed Detection of position O.

  FP410L   FP410L






Double Differential Magneto Resistor

Double Differential Magneto Resistor FP 410 L (4 x 80) FM Dimensions in mm Features • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage • Compact construction • Available in strip form for automatic assembly Type FP 410 L (4×80) FM FP 410 L (4×80) FM Semiconductor Group 1 Typical applications • • • • Incremental angular encoders Detection of sense of rotation Detection of speed Detection of position Ordering Code Q65410-L80E (taped) Q65110-L80F (singular) 07.96 FP 410 L (4 x 80) FM The double differential magneto resistor assembly consists of two pairs of magneto resistors, (L-type InSb/NiSb semiconductor resistors whose resistance value can be magnetically controlled), which are fixed to a ferrite substrate. Contact to the magneto resistors is achieved using a copper/polyimide carrier film known as Micropack. The basic resistance of each of the magnetic resistors is 80 Ω. The two series coupled pairs of magnetic resistors are actuated by an external magnetic field or can be biased by a permanent magnet and actuated by a soft iron target. Semiconductor Group 2 FP 410 L (4 x 80) FM Maximum ratings Parameter Operating temperature Storage temperature Power dissipation1) Supply voltage2) (B = 0.3 T) Thermal conductivity –attached to heatsink –in still air Characteristics (TA = 25 °C) Basic resistance (I ≤ 1 mA; B = 0 T) Center symmetry3) Relative resistance change (R = R01-3, R04.


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