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FP2250QFN Datasheet

Part Number FP2250QFN
Manufacturers Filtronic
Logo Filtronic
Description PACKAGED LOW NOISE / HIGH LINEARITY PHEMT
Datasheet FP2250QFN DatasheetFP2250QFN Datasheet (PDF)

www.DataSheet4U.com Preliminary Data Sheet FP2250QFN PACKAGED LOW NOISE, HIGH LINEARITY PHEMT • FEATURES ♦ 29 dBm Output Power at 1-dB Compression ♦ 17 dB Power Gain at 2 GHz ♦ 1.0 dB Noise Figure at 2 GHz ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a.

  FP2250QFN   FP2250QFN






PACKAGED LOW NOISE / HIGH LINEARITY PHEMT

www.DataSheet4U.com Preliminary Data Sheet FP2250QFN PACKAGED LOW NOISE, HIGH LINEARITY PHEMT • FEATURES ♦ 29 dBm Output Power at 1-dB Compression ♦ 17 dB Power Gain at 2 GHz ♦ 1.0 dB Noise Figure at 2 GHz ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 2250 µm Schottky barrier gate, defined by electronbeam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable highpower applications. The FP2250’s active areas are passivated with Si3N4, and the QFN package is ideal for low-cost, high-performance applications that require a surface-mount package. Typical applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN systems, and other types of wireless infrastructure systems up to 10 GHz. ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C Parameter Saturated Drain-Source Current FP2250QFN-1 FP2250QFN-2 Power at 1-dB Compression Power Gain at 1-dB Compression Power-Added Efficiency Noise Figure Output Third-Order Intercept Point Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Gate-Drain Breakdown Volta.


2009-09-08 : FP2250QFN    3TB4817-0B    3TB5017-0B    SCK083    SCK-083    SCK-xxx    SPF0001    ISPLSI5128VE    SI5100    SO842074   


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