FP212

Ordering number:EN4497 FP212 PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Driver Applications Features · Composite type with a PNP transistor and an NPN transistor, in one package, facilitating high-density mounting. · The FP212 is composed of 2 chips, one being equivalent to the 2SA1370 and the other the 2SC3467, placed in one package. Electrical Connection 1:Base 2:Collector 3:Emitter Common 4:Collector 5:Base 6:Collector 7:Collector (Top view) Package Dimensions unit:mm 2097A [FP212] 1:Base 2:Collector 3:Emitter Common 4:Collector 5:Base 6:Collector 7:Collector SANYO:PCP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg Mounted on ceramic board (250mm2×0.8mm) 1 unit Mounted on ceramic board (250mm2×0.8mm) Conditions Ratings (–)200 (–)200 (–)5 (–)100 (–)200 (–)10 0.75 1.0 150 –55 to +150 Unit V V V mA mA mA W W ˚C ˚C Electrical Characteristics at Ta=25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Symbol ICBO IEBO hFE fT Cob Cre VCE(sat) VBE(sat) VCB=(...