DatasheetsPDF.com

FP106 Datasheet

Part Number FP106
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description DC-DC Converter Applications
Datasheet FP106 DatasheetFP106 Datasheet (PDF)

Ordering number:EN4552 FP106 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features · Complex type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting. · The FP106 is composed of 2 chips, one being equivalent to the 2SA1898 and the other the SB1005C. Package Dimensions unit:mm 2088A [FP106] 1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode) SANYO:PCP4 (Bo.

  FP106   FP106






Part Number FP10W50
Manufacturers ETC
Logo ETC
Description MOSFET
Datasheet FP106 DatasheetFP10W50 Datasheet (PDF)

.

  FP106   FP106







Part Number FP10R12YT3
Manufacturers Eupec GmbH
Logo Eupec GmbH
Description IGBT Modules
Datasheet FP106 DatasheetFP10R12YT3 Datasheet (PDF)

Technische Information / technical information IGBT-Module IGBT-modules FP10R12YT3 Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter !" " / /* # 7 " # " Höchstzulässige Werte / maximum rated values $%& ' ()* $, ' 0 )* $, ' ()* 8' " 9 $, ' 0 )* +,-. 1, 234 1, 1,:; >3> +A-. " 69 +A- ' ( +9 $%& ' ()* 69 +A- ' ( +9 $%& ' ()* "69 +,- ' +A-9 $%& ' ()* (+ B (+ +,- FG> +A->H IA AK2> + + *KOF *SOF 1,-. 1A-. Y 32 9 9 ( ( (9 9? 9 ( (90 9 9 9P 9 5 (9 5?9( BC " D 9 ( 59( 5 + 6 6 6 @ + .

  FP106   FP106







Part Number FP10R12W1T7_B3
Manufacturers Infineon
Logo Infineon
Description IGBT-Module
Datasheet FP106 DatasheetFP10R12W1T7_B3 Datasheet (PDF)

FP10R12W1T7_B3 EasyPIM™ module Preliminary datasheet EasyPIM™ module with TRENCHSTOP™IGBT7 and Emitter Controlled 7 diode and NTC Features • Electrical features - Low VCEsat - Overload operation up to 175°C - TRENCHSTOPTM IGBT7 • Mechanical features - Solder contact technology - Compact design - High power density - Al2O3 substrate with low thermal resistance - 2.5 kV AC 1 min insulation Potential applications • Air conditioning • Auxiliary inverters • Motor drives Product validation • Qualified.

  FP106   FP106







Part Number FP10R12W1T7_B11
Manufacturers Infineon
Logo Infineon
Description IGBT
Datasheet FP106 DatasheetFP10R12W1T7_B11 Datasheet (PDF)

FP10R12W1T7_B11 EasyPIM™ModulmitTRENCHSTOP™IGBT7undEmitterControlled7DiodeundPressFIT/NTC EasyPIM™modulewithTRENCHSTOP™IGBT7andEmitterControlled7diodeandPressFIT/NTC VorläufigeDaten/PreliminaryData PotentielleAnwendungen • Hilfsumrichter • Klimaanlagen • Motorantriebe ElektrischeEigenschaften • NiedrigesVCEsat • TrenchstopTMIGBT7 • Überlastbetriebbiszu175°C MechanischeEigenschaften • 2,5kVAC1minIsolationsfestigkeit • Al2O3 Substrat mit kleinem thermische.

  FP106   FP106







Part Number FP10R12W1T7
Manufacturers Infineon
Logo Infineon
Description IGBT
Datasheet FP106 DatasheetFP10R12W1T7 Datasheet (PDF)

FP10R12W1T7 EasyPIM™ModulmitTRENCHSTOP™IGBT7undEmitterControlled7DiodeundNTC EasyPIM™modulewithTRENCHSTOP™IGBT7andEmitterControlled7diodeandNTC VorläufigeDaten/PreliminaryData PotentielleAnwendungen • Hilfsumrichter • Klimaanlagen • Motorantriebe ElektrischeEigenschaften • NiedrigesVCEsat • TrenchstopTMIGBT7 • Überlastbetriebbiszu175°C MechanischeEigenschaften • 2,5kVAC1minIsolationsfestigkeit • Al2O3 Substrat mit kleinem thermischen Widerstand • HoheLeistu.

  FP106   FP106







DC-DC Converter Applications

Ordering number:EN4552 FP106 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features · Complex type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting. · The FP106 is composed of 2 chips, one being equivalent to the 2SA1898 and the other the SB1005C. Package Dimensions unit:mm 2088A [FP106] 1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode) SANYO:PCP4 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1cycle 15 17 1 8 –55 to +125 –55 to +125 V V A A ˚C ˚C VCBO VCEO VEBO IC I CP IB PC Tj Tstg Mounted on ceramic board (250mm2×0.8mm) –15 –15 –5 –3 –5 –600 1.3 150 –55 to +150 V V V A A mA W ˚C ˚C Symbol Conditions Ratings Unit Marking:106 Electrical Connection 1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode) Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 .


2005-04-01 : R2KY    M28F008    M28F010    M28F512    M27C516    M27C64    M27C64A    M27C800    M27V101    M27V102   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)