Ordering number:EN4655
FP104
TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode
DC-DC Converter App...
Ordering number:EN4655
FP104
TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
· Composite type with 2devices (PNP transistor and Shottky barrier diode) contained in one package, facilitating high-density mounting. · The FP104 is formed with a chips, one being equivalent to the 2SA1729 and a chip being eqivalent to the SB05-05CP placed in one package.
Package Dimensions
unit:mm 2088A
[FP104]
1:Base 2,4,6,7:Common (Collcector, Cathode) 3:Emitter 5:Anode SANYO:PCP4 (Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter [TR] Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [SBD] Repetitive Peak Reverse
Voltage Non-repetitive Peak Reverse Surge
Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1cycle 50 55 500 5 –55 to +125 –55 to +125 V V mA A ˚C ˚C VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on ceramic board (250mm2×0.8mm) –50 –40 –5 –1.5 –3 –300 1.3 150 –55 to +150 V V V A A mA W ˚C ˚C Symbol Conditions Ratings Unit
Marking:202 Electrical Connection
1:Base 2,4,6,7:Common (Collcector, Cathode) 3:Emitter 5:Anode (Top view)
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